In focus: Atomic resolution Fin FET metrology

Publication in focus:
Tae-Gon Kim et al: Atomic Resolution Quality Control for Fin Oxide Recess by Atomic Resolution Profiler DOI: 10.4028/www.scientific.net/SSP.255.304

Discover how nanotools M-CNT-100 probes are enabling a unique metrology solution for state-of-the-art semiconductor manufacturing. The currently presented technology can be effectively used for process optimization and non-destructive, in-line manufacturing process monitoring of latest FinFET devices.

• Experimental setup:
  Samples: SADP Si Fin with 45 nm pitch after oxide recess process
  Tool: Park NX-3DM, Park Systems
  AFM probe: M-CNT-100 for Park AAFM, nanotools
• Extracted feature parameters:
  Along Fin trench: Oxide recess profile variation
  Across wafer: Fin profile, oxide recess profile, oxide footing shape uniformity
• Key findings:
  Long term repeatability: Fin height 3σ < 0.6 nm (90 measurements)
  Throughput: 1000+ dies on 50+ wafers with one individual M-CNT-100
  Measurement time: < 2 min/site
  Accuracy: dimensional verification by HRTEM

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